| Electrophoretic deposition of Bi2WO6 as a thin film and its dynamic studies |
| Paper ID : 1682-UFGNSM-FULL |
| Authors: |
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mahboobeh Zargazi * Sonochemical Research Center, Department of Chemistry, Faculty of Science, Ferdowsi University of Mashhad, 91779 Mashhad, Ira |
| Abstract: |
| Bi2WO6 was known as n-type semiconductor applied for various applications such as water splitting, photodegradation of air and water pollutants, etc. The bismuth tungstate is one of bismuth mixed oxides with general formula (Bi2O2)2+ (An-1BnO3n+1)2-, this oxide is the simplest compound of this family named Aurivillius which have the layer structure. In this work, anodic electrophoretic deposition (EPD), a low cost, one-step and flexible method, has been successfully applied for preparation of bismuth tungstate (Bi2WO6) thin films on the substrate. Stable suspensions consisted of acetone and bismuth tungstate flower like nanostructure. The deposition was achieved on the anode at applied field strengths of 5-25V cm-1 using a total solids loading of 0.25-1.00 g L-1 at ambient condition. The deposition mechanism of Bi2WO6 films was firstly explained, and deposition kinetics were investigated in details. In the mechanism of EPD, the effect of different parameters and their relation were investigated. As prepared thin films were characterized qualitatively by Atomic force microscopy (AFM), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD) and Raman analysis, respectively. The XRD analysis was indicated purely of Bi2WO6 thin film with orthorhombic phase. The results confirm the homogeneity and good adherent of Bi2WO6 thin film synthesize by EPD technique for the first time. |
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| Status : Conditional Accept (Oral Presentation) |
