| The Effects of Biaxially Tensile and Compressive Strains on Silicene Characteristics |
| Paper ID : 1525-UFGNSM-FULL (R1) |
| Authors: |
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Mohammad Mahdi Khatami *1, Mohammad Kazem Moravvej-Farshi2 1Tarbiat Mordares University, After Nasr Bridge, Jalal Ale-Ahmad express way 2Tarbiat Modares University |
| Abstract: |
| Silicene, a new 2D material, is one of the promising candidates to be used in the future CMOS technology. However, its zero band gap limits its application in electronic devices. Strain is one of the usual ways to engineer material properties including their bandgap. On the other hand, strain is always exist due to the sub layers and up layers in real devices and should be studied to see its effects on silicene characteristics. Here, we represent studying of silicene structure, band diagram, and density of states. Then, we have used biaxially tensile and compressive strains to see their effects on silicene properties. Simulation results show that tensile strain will not open a band gap but provides a semi-metal to metal transition at the stain value of 7%. Also, compressive strain opens a bandgap in order of 5 meV at the strain value of 6.2%. Further increase in compressive strain will cause a semi-metal to metal transition and decrease the bandgap. |
| Keywords: |
| Silicene, Band diagram, Bandgap, Density of states, Biaxially strain, Compressive, Tensile |
| Status : Paper Accepted (Poster Presentation) |
