| Insulated InP (100) Semiconductor by Nano Nucleus Generation in Pure water |
| Paper ID : 1198-UFGNSM-FULL (R2) |
| Authors: |
|
Farzaneh Ghorab * Arzhantin square, Alvand street, Ahoramazda, No. 19 |
| Abstract: |
| Abstract Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo-mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA/cm2 ) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, in pure water (0.08 µs/cm,250c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. The passive regions were nonuniform too, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V). |
| Keywords: |
| Insulated InP, Semiconductor, Nano Nucleus, Pure water |
| Status : Paper Accepted (Poster Presentation) |
