| Effect of Fluorine doping on temperature dependence of resistance in β-V2O5 thin film |
| Paper ID : 1064-UFGNSM-FULL |
| Authors: |
|
Maliheh Mousavi *1, gholam hossein khorrami2, ahmad kompany3 1number 7, bokharaee street, ahmadabad street, mashhad, Iran 21Department of Physics, Faculty of basic science, University of Bojnord, Bojnord, Iran 32Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran |
| Abstract: |
| V2O5 is the most stable with highest oxidation state, having many interesting properties including: Multi-valance, layered structure, wide optical band gap (2.44eV), good chemical and thermal stably, excellent thermoelectric properties. V2O5 has been used in fabricating many solid state devices such as: high capacity lithium batteries, display systems, color catalysis, smart windows and in gas sensors. It has been shown that different properties of V2O5 could be improved by introducing some guest cations into the material matrix. In this paper, F-doped vanadium oxide thin films are prepared via spray pyrolysis method on glass substrates. For the deposition of samples, the precursor solution was prepared by dissolving and VCl3 different amounts of NH4F in distilled water. The [F]/[V] atomic ratio was 0–60 at.%. The samples were deposited under a fixed nozzle to substrate distance (d) of 35 cm and compressed air pressure (Pair) of 3 atm as the carrier gas. The films were prepared at 0.1mol/lit solution concentration (VCl3), (R) = 5 ml min−1 solution spray and at Tsub = 450°C (substrate temperature). The effect of F doping on the temperature dependence of resistance for the vanadium oxide thin films was studied. The results show the resistance has a decreasing trend and then begins to increase, without displaying the exact transition temperature. In this way the phase transition from semiconductor to metallic one occurs at 274, 298, 292 and 262°c for the films with 0, 20, 40 and 60 at % F doping level respectively. With increase in the F doping level from 20 to 60 at %, the temperature phase transition decrease. |
| Keywords: |
| vanadium oxide, thin film, resistance |
| Status : Paper Accepted (Poster Presentation) |
